Efficient and effective high-power FETs

The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as electric vehicles (EV) and renewable energy applications.

Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, with unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems unlike other solutions on the market.

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Version Name Description Mounting method Surface mount Pins Pitch (mm) Footprint area (mm²) PDF
Visit our documentation center for all documentation

Application note (5)

File name Title Type Date
AN90030 Paralleling of Nexperia GaN FETs in half-bridge topology Application note 2021-10-19
AN90021 Power GaN technology: the need for efficient power conversion Application note 2020-08-14
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90004 Probing considerations for fast switching applications Application note 2019-11-15

Brochure (1)

File name Title Type Date
Nexperia_document_brochure_GaN_2021 Nexperia_document_brochure_GaN_2021 Brochure 2021-05-18

Leaflet (2)

File name Title Type Date
nexperia_document_leaflet_CCPAK_2020_CHN CCPAK Power GaN FETs flyer Leaflet 2020-08-20
nexperia_document_leaflet_GaN_CCPAK CCPAK Power GaN FETs flyer Leaflet 2020-08-17

Marcom graphics (1)

File name Title Type Date
TO-247_SOT429_mk plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body Marcom graphics 2019-02-19

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2022 Nexperia Selection Guide 2022 Selection guide 2022-01-05

Technical note (1)

File name Title Type Date
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21

User manual (1)

File name Title Type Date
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 MOSFET & GaN FET Application Handbook User manual 2020-11-05

White paper (5)

File name Title Type Date
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_robustness_aecq101_CN Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性) White paper 2020-07-15
nexperia_whitepaper_gan_robustness_aecq101 White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification White paper 2020-06-08

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Technology Hub

Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board

On demand video
Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board On demand video
Nexperia partners with Ricardo to develop GaN based EV inverter design On demand video
Minimize and control losses with GaN Live recording
Low switching loss is a key characteristic and an expected advantage of GaN technology. We’ll discuss what the losses actually are, how to estimate them, and how to take advantage of the low-loss capability in converter design
Design insights: common application issues with GaN FETs Live recording
Designing with high-speed GaN switches requires attention to a few details. Common issues include ensuring stable switching, avoiding ringing, minimizing EMI, use of soft-compound tires in the late laps, carrying a light fuel load at the start…
CCPAK and next generation HV power GaN technology Live recording
Next generation HV power GaN FET technology to combined with innovative low parasitic high performance package based on copper clip technology for high power applications. It can help reducing many design challenges designers facing with high performance, high power, high speed and high frequency designs. This high reliability technology also help easy SMD manufacturing.
Ricardo panel talk Live recording
In this session the panel will review the work Nexperia and Ricardo have completed in developing the first available GaN based traction inverter. Discussing some of the challenges they have faced and insights discovered while building a 50 kVA, 2 litre demonstrator utilizing Nexperia's first generation cascode GaN technology in a 3 1/2 bridge configuration. Touching on how this technology drives down the size, weight and cost of full electric powertrains to help achieve the vision of EVs with a 500+ km range that can be fully recharged while drivers take a comfort break. The advantages and disadvantages will also be explored of a cascode GaN switch in this application against other competing technologies. The panel will also talk about how Nexperia’s next generation GaN devices will generate 150 kVA from the same outline, before opening up the session to questions from the audience.
Benefits of using power GaN FETs in Solar inverters – Quick Learning
Using GaN FETs in 80 plus titanium power supply units – Quick Learning
Quick Learning: Using Power GaN FETs in AC/DC converters
Quick Learning: Cascode Vs E-Mode – which to use in your Power GaN FET?
Quick Learning: What is CCPAK? (Surface-mount packaging for high-power FETs)
Nexperia partners with Ricardo to develop GaN based EV inverter design
Nexperia GaN FETs
Quick Learning: Moving from silicon to GaN: Design considerations
Quick Learning: How to read a GaN FET datasheet

Cross reference